scientific article; zbMATH DE number 854369

DOI<401::AID-MMA795>3.0.CO;2-L 10.1002/(SICI)1099-1476(19960325)19:5<401::AID-MMA795>3.0.CO;2-LzbMath0860.35008MaRDI QIDQ4869443

Ansgar Jüngel

Publication date: 29 April 1997

Title: zbMATH Open Web Interface contents unavailable due to conflicting licenses.

zbMATH Keywords

high injection regime

Mathematics Subject Classification ID

Singular perturbations in context of PDEs (35B25) Degenerate parabolic equations (35K65) Motion of charged particles (78A35)

Related Items (7)

Stationary equations for charge carriers in semiconductors including electron-hole scattering ⋮ Diffusive semiconductor moment equations using Fermi-Dirac statistics ⋮ The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions ⋮ On a quasilinear degenerate system arising in semiconductors theory. I: Existence and uniqueness of solutions ⋮ Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation ⋮ Existence of weak solutions to a class of degenerate semiconductor equations modeling avalanche generation ⋮ On a quasilinear degenerate system arising in semiconductor theory. Part II: Localization of vacuum solutions

Cites Work

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• Charge transport in semiconductors with degeneracy effects
• ON THE UNIQUENESS OF SOLUTIONS TO THE DRIFT-DIFFUSION MODEL OF SEMICONDUCTOR DEVICES
• ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
• Semiconductor Equations for variable Mobilities Based on Boltzmann Statistics or Fermi-Dirac Statistics
• QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
• Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion

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