AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS

DOI10.1108/eb010145zbMath0850.65298OpenAlexW2038877176MaRDI QIDQ4872545

Peter M. Pinsky, Kincho H. Law, N. R. Aluru, Robert W. Dutton

Publication date: 17 June 1996

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010145

zbMATH Keywords

energy methodfinite elementBoltzmann transport equationboundary integralssemiconductor device simulationmulti-dimensional hydrodynamic model

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05) Boundary element methods for boundary value problems involving PDEs (65N38)

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A review of hydrodynamical models for semiconductors: Asymptotic behavior

Cites Work

• On the symmetric form of systems of conservation laws with entropy
• A finite element formulation for the hydrodynamic semiconductor device equations
• ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES