Structural properties of the one-dimensional drift-diffusion models for semiconductors
From MaRDI portal
Publication:4889959
DOI10.1090/S0002-9947-96-01519-XzbMath0866.34019MaRDI QIDQ4889959
Publication date: 14 July 1997
Published in: Transactions of the American Mathematical Society (Search for Journal in Brave)
existenceuniquenessquasi-neutral approximationcurrent voltage characteristiccurrent driven modelvoltage driven model
Nonlinear boundary value problems for ordinary differential equations (34B15) Bifurcation theory for ordinary differential equations (34C23) Motion of charged particles (78A35)
Related Items (4)
ON THE EXISTENCE OF WEAK SOLUTIONS TO THE STATIONARY SEMICONDUCTOR EQUATIONS: THE CURRENT DRIVEN CASE ⋮ Uniqueness results for the steady-state electrodiffusion equations in the case of monotonic potentials and multiple junctions ⋮ Mathematical and numerical study of a corrosion model ⋮ Simulation of visible and ultra-violet group-III nitride light emitting diodes
This page was built for publication: Structural properties of the one-dimensional drift-diffusion models for semiconductors