PERFORMANCE EVALUATION OF SOURCE HETEROJUNCTION STRAINED CHANNEL GATE ALL AROUND NANOWIRE TRANSISTOR

DOI10.1142/S0217984912500765zbMath1263.82063OpenAlexW2138699979MaRDI QIDQ4911462

Morteza Fathipour, Rahim Faez, Reza Hosseini

Publication date: 15 March 2013

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984912500765

zbMATH Keywords

NEGFGAA NWTsource heterojunctionstrained channel

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70) Quantum waveguides, quantum wires (82D77)

Cites Work

• Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs
• Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs
• NUMERICAL INVESTIGATION ON THE TEMPERATURE DEPENDENCE OF THE CYLINDRICAL-GATE-ALL-AROUND Si-NW-FET
• Quantum Transport: Atom to Transistor

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