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A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS - MaRDI portal

A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

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Publication:4912673

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DOI10.1142/S021797921250155XzbMATH Open1260.82086MaRDI QIDQ4912673

Seyyed Saleh Ghoreishi, Reza Yousefi

Publication date: 5 April 2013

Published in: International Journal of Modern Physics B (Search for Journal in Brave)

zbMATH Keywords

carbon nanotube field effect transistor band-to-band-tunneling

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

Related Items (1)

Influence of strain on functional characteristics of nanoelectronic devices

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