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CHANNEL CONDUCTANCE OF ABA STACKING TRILAYER GRAPHENE NANORIBBON FIELD-EFFECT TRANSISTOR - MaRDI portal

CHANNEL CONDUCTANCE OF ABA STACKING TRILAYER GRAPHENE NANORIBBON FIELD-EFFECT TRANSISTOR

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Publication:4918270

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DOI10.1142/S0217984912500479zbMath1262.82051MaRDI QIDQ4918270

No author found.

Publication date: 24 April 2013

Published in: Modern Physics Letters B (Search for Journal in Brave)

zbMATH Keywords

model conductance bilayer graphene FET trilayer graphene

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

Related Items (1)

ELECTRON TRANSPORT IN MULTI-TERMINAL GRAPHENE NANODEVICE WITH INCLINED CROSS STRUCTURES

Cites Work

Quantum Transport: Atom to Transistor

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