Numerical study of the systematic error in Monte Carlo schemes for semiconductors

DOI10.1051/M2AN/2010051zbMath1198.82068OpenAlexW2045160339MaRDI QIDQ4933353

Wolfgang Wagner, Orazio Muscato, Vincenza Di Stefano

Publication date: 12 October 2010

Published in: ESAIM: Mathematical Modelling and Numerical Analysis (Search for Journal in Brave)

Full work available at URL: https://eudml.org/doc/44671

zbMATH Keywords

Monte Carlo simulationselectronic devicesBoltzmann-Poisson equations

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70)

Related Items (10)

Electron transport in silicon nanowires having different cross-sections ⋮ Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires ⋮ Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ Numerical Study of Transient Wigner–Poisson Model for RTDs: Numerical Method and Its Applications ⋮ Heat generation in silicon nanometric semiconductor devices ⋮ A stochastic algorithm without time discretization error for the Wigner equation ⋮ The Wigner Branching Random Walk: Efficient Implementation and Performance Evaluation ⋮ Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire ⋮ A Class of Stochastic Algorithms for the Wigner Equation

Cites Work

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• Free-flight time generation in the Monte Carlo simulation of carrier transport in semiconductors
• Stochastic Numerics for the Boltzmann Equation
• Time step truncation in direct simulation Monte Carlo for semiconductors

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