Quantum interface conditions for quasi‐Fermi levels in an abrupt heterojunction

DOI10.1108/03321649910296555zbMath0938.81562OpenAlexW2049008445MaRDI QIDQ4942453

Abderrazzak El Boukili

Publication date: 27 June 2000

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321649910296555

zbMATH Keywords

finite element methodselectromagneticsWKB approximationdrift-diffusiontunneling effectstransistorsquasi-Fermi levelsabrupt heterojunctionmesh accuracysemi-quantum model

Mathematics Subject Classification ID

Diffraction, scattering (78A45) Electromagnetic interaction; quantum electrodynamics (81V10) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10) (2)-body potential quantum scattering theory (81U05)

Cites Work

• COMPARATIVE STUDIES OF HYDRODYNAMIC AND ENERGY TRANSPORT MODELS
• Arclength continuation methods and applications to 2D drift‐diffusion semiconductor equations

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