The 3D transient semiconductor equations with gradient-dependent and interfacial recombination

DOI10.1142/S0218202519500350zbMath1425.35097arXiv1805.01348OpenAlexW2964244485WikidataQ127750291 ScholiaQ127750291MaRDI QIDQ4973265

Karoline Disser, Joachim Rehberg

Publication date: 3 December 2019

Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)

Full work available at URL: https://arxiv.org/abs/1805.01348

zbMATH Keywords

mixed boundary conditionsnonlinear parabolic systemsemiconductor deviceheterogeneous materialvan Roosbroeck's systemAvalanche recombinationdiscontinuous coefficients and datasurface recombination

Mathematics Subject Classification ID

Nonlinear parabolic equations (35K55) PDEs in connection with optics and electromagnetic theory (35Q60) Reaction-diffusion equations (35K57) PDEs with low regular coefficients and/or low regular data (35R05) Motion of charged particles (78A35) Initial value problems for second-order parabolic systems (35K45)

Related Items (3)

Extrapolated elliptic regularity and application to the van Roosbroeck system of semiconductor equations ⋮ Global existence, uniqueness and stability for nonlinear dissipative bulk-interface interaction systems ⋮ Interpolation theory for Sobolev functions with partially vanishing trace on irregular open sets

Uses Software

• WIAS-TeSCA
• Sentaurus Device

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