Transonic Steady-States of Euler--Poisson Equations for Semiconductor Models with Sonic Boundary

DOI10.1137/21M1416369zbMath1487.35366OpenAlexW4205746433MaRDI QIDQ5024683

Liang Chen, Ming Mei, Kai-Jun Zhang, Guojing Zhang

Publication date: 27 January 2022

Published in: SIAM Journal on Mathematical Analysis (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/21m1416369

zbMATH Keywords

Euler-Poisson equationslocal analysishydrodynamic model of semiconductorstransonic shock solutionssmooth transonic solutions

Mathematics Subject Classification ID

Smoothness and regularity of solutions to PDEs (35B65) Asymptotic behavior of solutions to PDEs (35B40) Shocks and singularities for hyperbolic equations (35L67) PDEs in connection with optics and electromagnetic theory (35Q60) PDEs in connection with fluid mechanics (35Q35) Shock waves and blast waves in fluid mechanics (76L05) Transonic flows (76H05) Existence problems for PDEs: global existence, local existence, non-existence (35A01) Motion of charged particles (78A35) Supersonic flows (76J20) Self-similar solutions to PDEs (35C06) Systems of nonlinear higher-order PDEs (35G50) PDEs in connection with semiconductor devices (35Q81)

Related Items

Radially symmetric spiral flows of the compressible Euler-Poisson system for semiconductors, Large-time behavior of solutions for unipolar Euler-Poisson equations with critical over-damping, Sonic-supersonic-shock-subsonic-sonic solution to Euler-Poisson system with varying background charges, Structural Stability of Radial Interior Subsonic Steady-States to n-D Euler-Poisson System of Semiconductor Models with Sonic Boundary, Structural stability of subsonic steady states to the hydrodynamic model for semiconductors with sonic boundary, Quasi-Neutral Limit to Steady-State Hydrodynamic Model of Semiconductors with Degenerate Boundary, Subsonic steady-states for bipolar hydrodynamic model for semiconductors, Nonlinear structural stability and linear dynamic instability of transonic steady-states to hydrodynamic model for semiconductors

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