Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires
From MaRDI portal
Publication:5066114
DOI10.1080/23324309.2017.1318402OpenAlexW2702122613MaRDI QIDQ5066114
Tina Castiglione, Orazio Muscato
Publication date: 29 March 2022
Published in: Journal of Computational and Theoretical Transport (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/23324309.2017.1318402
Cites Work
- Unnamed Item
- Electron transport in silicon nanowires having different cross-sections
- A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation
- An energy transport model describing heat generation and conduction in silicon semiconductors
- Properties of the steady state distribution of electrons in semiconductors
- Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- A Class of Stochastic Algorithms for the Wigner Equation
- Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model
- Heat generation in silicon nanometric semiconductor devices
- Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
- Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
- Solution of the Schrödinger equation for a particle in an equilateral triangle
- Numerical study of the systematic error in Monte Carlo schemes for semiconductors
This page was built for publication: Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires