An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors

DOI10.1080/23324309.2017.1352513OpenAlexW2758934038MaRDI QIDQ5066287

Vincenza Di Stefano

Publication date: 29 March 2022

Published in: Journal of Computational and Theoretical Transport (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1080/23324309.2017.1352513

zbMATH Keywords

Boltzmann equationmaximum entropy principleelectron-phonon systemthermal effectssilicon carbide semiconductors

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX)

Related Items (1)

Microscale Thermal Energy Transfer Over a Combined System of Thin Films: Analytical Approach

Cites Work

• A new formula for thermal conductivity based on a hierarchy of hydrodynamical models
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Partial moment entropy approximation to radiative heat transfer
• Seebeck effect in silicon semiconductors
• Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model
• Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
• Understanding Non-equilibrium Thermodynamics
• A hydrodynamic model for silicon semiconductors including crystal heating
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