Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
From MaRDI portal
Publication:5066291
DOI10.1080/23324309.2017.1412985OpenAlexW2782396150MaRDI QIDQ5066291
No author found.
Publication date: 29 March 2022
Published in: Journal of Computational and Theoretical Transport (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/23324309.2017.1412985
Related Items (1)
Cites Work
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Semiconductor device design using the \textsc{BiMADS} algorithm
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
- Moment closure hierarchies for kinetic theories.
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- A COKOSNUT code for the control of the time-dependent Kohn-Sham model
- Quasi-hydrodynamic semiconductor equations
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Hierarchy of semiconductor equations: relaxation limits with initial layers for large initial data.
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- Semiconductor device optimization in the presence of thermal effects
- Computational Optimization of Systems Governed by Partial Differential Equations
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
- Information Theory and Statistical Mechanics
- Optimization with PDE Constraints
- OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS
- Maximisation of the entropy in non-equilibrium
- Fast Optimal Design of Semiconductor Devices
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGN
- On a hierarchy of macroscopic models for semiconductors
- On Fast Optimal Control for Energy-Transport-based Semiconductor Design
- High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure
This page was built for publication: Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
