Phonon Transport in a Silicon Film with Presence of an Aluminum Dot in the Film
From MaRDI portal
Publication:5068043
DOI10.1080/23324309.2015.1094491OpenAlexW2292487373MaRDI QIDQ5068043
Publication date: 5 April 2022
Published in: Journal of Computational and Theoretical Transport (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/23324309.2015.1094491
Cites Work
- Non-equilibrium molecular dynamics study of thermal energy transport in Au-SAM-Au junctions
- Thermal boundary resistance of nanocomposites
- Prediction of thermal conductivity of nanostructures: influence of phonon dispersion approximation
- Effects of temperature and disorder on thermal boundary conductance at solid-solid interfaces: nonequilibrium molecular dynamics simulations
- Lattice Phonon and Electron Temperatures in Silicon-Aluminum Thin Films Pair: Comparison of Boltzmann Equation and Modified Two-Equation Model
This page was built for publication: Phonon Transport in a Silicon Film with Presence of an Aluminum Dot in the Film