Parameter extraction and modelling of the MOS transistor by an equivalent resistance

DOI10.1080/13873954.2020.1857790zbMath1497.94212OpenAlexW3130368574MaRDI QIDQ5070669

Sherif M. Sharroush, Yasser S. Abdalla

Publication date: 14 April 2022

Published in: Mathematical and Computer Modelling of Dynamical Systems (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1080/13873954.2020.1857790

zbMATH Keywords

time delaymodellingparameter extractionquantitative analysisequivalent resistancemulti-transistor circuits

Mathematics Subject Classification ID

Circuits in qualitative investigation and simulation of models (94C60)

This page was built for publication: Parameter extraction and modelling of the MOS transistor by an equivalent resistance