A stochastic resonator in a layered semiconductor device

DOI10.1142/S0217979221502842zbMath1492.35334OpenAlexW3202245196MaRDI QIDQ5070728

Tibebe Birhanu, Lemi Demeyu, Mesfin Asfaw Taye, Yoseph Abebe, Mulugeta Bekele

Publication date: 14 April 2022

Published in: International Journal of Modern Physics B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217979221502842

zbMATH Keywords

stochastic resonanceimpurity diffusionlayered semiconductor

Mathematics Subject Classification ID

PDEs in connection with semiconductor devices (35Q81)

Cites Work

• Explicit calculation of a model for diffusion in nonconstant temperature
• Brownian motion in a field of force and the diffusion model of chemical reactions

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