RTS noise in semiconductor devices: time constants estimates and observation window analysis

DOI10.1088/1742-5468/AC5DBFOpenAlexW4223907153MaRDI QIDQ5078653

Roberto da Silva, Gilson I. Wirth

Publication date: 23 May 2022

Published in: Journal of Statistical Mechanics: Theory and Experiment (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1088/1742-5468/ac5dbf

zbMATH Keywords

interfaces in random mediacurrent fluctuationsfluctuation phenomenanoise models

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX)

Cites Work

• Random telegraph signals with time dependent capture and emission probabilities: analytical and numerical results
• Probability and Statistics with Reliability, Queuing and Computer Science Applications
• Collective Poisson process with periodic rates: applications in physics from micro-to nanodevices
• A NOVEL AND PRECISE TIME DOMAIN DESCRIPTION OF MOSFET LOW FREQUENCY NOISE DUE TO RANDOM TELEGRAPH SIGNALS
• Noise in Semiconductors: Spectrum of a Two-Parameter Random Signal

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