Challenges in Drift-Diffusion Semiconductor Simulations

DOI10.1007/978-3-030-43651-3_58zbMath1454.65142OpenAlexW3034668113MaRDI QIDQ5117487

Dirk Peschka, Patricio Farrell

Publication date: 25 August 2020

Published in: Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-030-43651-3_58

zbMATH Keywords

finite element methodfinite volume methodsemiconductornonlinear diffusionconvergence orderdrift-diffusionScharfetter-Gummel schemediffusion enhancementvan Roosbroeck system

Mathematics Subject Classification ID

Error bounds for boundary value problems involving PDEs (65N15) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37) Motion of charged particles (78A35) PDEs in connection with statistical mechanics (35Q82) Finite volume methods for boundary value problems involving PDEs (65N08)

Cites Work

• Unnamed Item
• A finite volume scheme for convection-diffusion equations with nonlinear diffusion derived from the Scharfetter-Gummel scheme
• Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations
• Existence of Bounded Discrete Steady-State Solutions of the Van Roosbroeck System on Boundary Conforming Delaunay Grids

This page was built for publication: Challenges in Drift-Diffusion Semiconductor Simulations