Unipolar Drift-Diffusion Simulation of S-Shaped Current-Voltage Relations for Organic Semiconductor Devices

DOI10.1007/978-3-030-43651-3_59zbMath1454.65143OpenAlexW3105120794MaRDI QIDQ5117488

Jürgen Fuhrmann, Grigor Nika, Matthias Liero, Duy-Hai Doan, Annegret Glitzky

Publication date: 25 August 2020

Published in: Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-030-43651-3_59

zbMATH Keywords

path followingfinite volumesorganic semiconductorsGauss-Fermi statisticsgeneralized Scharfetter-Gummel schemenon-isothermal drift-diffusion

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Numerical integration (65D30) Electro- and magnetostatics (78A30) Quasilinear elliptic equations with (p)-Laplacian (35J92) Finite volume methods applied to problems in thermodynamics and heat transfer (80M12) Diffusive and convective heat and mass transfer, heat flow (80A19) Finite volume methods for boundary value problems involving PDEs (65N08)

Related Items (1)

A coarse‐grained electrothermal model for organic semiconductor devices

Uses Software

• ddfermi

Cites Work

• Comparison and numerical treatment of generalised Nernst-Planck models
• Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
• Instationary drift-diffusion problems with Gauss-Fermi statistics and field-dependent mobility for organic semiconductor devices
• Discretization of coupled heat and electrical diffusion problems by finite-element and finite-volume methods
• Hybrid Finite-Volume/Finite-Element Schemes for p(x)-Laplace Thermistor Models

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