3D Analytical Modeling of Potential, Drain Current, and Threshold Characteristics for Long-Channel Square Gate-All-Around (SGAA) MOSFETs
DOI10.1007/978-3-030-39847-7_9zbMath1454.78033OpenAlexW3047384285MaRDI QIDQ5141353
Mohamed E. Aboulwafa, Hamdy Abdelhamid, Azza M. Anis, Mohamed I. Eladawy
Publication date: 18 December 2020
Published in: Recent Advances in Engineering Mathematics and Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/978-3-030-39847-7_9
Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10) Statistical mechanics of semiconductors (82D37) Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) Technical applications of optics and electromagnetic theory (78A55) Motion of charged particles (78A35) Electro- and magnetostatics (78A30)
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