DISCRETE STOCHASTIC SIMULATION OF THE ELECTRONS AND HOLES RECOMBINATION IN THE 2D AND 3D INHOMOGENEOUS SEMICONDUCTOR

DOI10.17223/20710410/34/9zbMath1490.82025OpenAlexW2565603060MaRDI QIDQ5150762

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Publication date: 15 February 2021

Published in: Prikladnaya diskretnaya matematika (Search for Journal in Brave)

Full work available at URL: http://mathnet.ru/eng/pdm565

zbMATH Keywords

diffusioncellular automatasemiconductorrecombinationstochastic simulationtunnelling

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Cellular automata (computational aspects) (68Q80) Stochastic particle methods (65C35)

Cites Work

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• A stochastic method for solving Smoluchowski's coagulation equation
• Stochastic simulation of fluctuation-induced reaction-diffusion kinetics governed by Smoluchowski equations
• Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations
• Stochastic Lagrangian model for spatially inhomogeneous Smoluchowski equation governing coagulating and diffusing particles

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