A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs
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Publication:5345902
DOI10.4208/cicp.071109.261110azbMath1364.82057OpenAlexW2323734099MaRDI QIDQ5345902
Gang Du, Tiao Lu, Pingwen Zhang, Xiao Yan Liu
Publication date: 7 June 2017
Published in: Communications in Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.4208/cicp.071109.261110a
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The Consistency and the Monte Carlo Method for Semiconductor Boltzmann Equations with Multivalley ⋮ A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo ⋮ Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley ⋮ Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models ⋮ Discrete kernel preserving model for 1D electron-optical phonon scattering
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