A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands

DOI10.1016/J.MCM.2010.08.007zbMath1211.82062OpenAlexW2069512378MaRDI QIDQ534826

Giovanni Mascali, Vittorio Romano

Publication date: 10 May 2011

Published in: Mathematical and Computer Modelling (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.mcm.2010.08.007

zbMATH Keywords

hydrodynamical modelshole transport

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)

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• The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands

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