scientific article; zbMATH DE number 5226683
From MaRDI portal
Publication:5436075
zbMATH Open1142.82398MaRDI QIDQ5436075
Publication date: 14 January 2008
Title of this publication is not available (Why is that?)
Related Items (2)
Numerical method of mixed finite volume-modified upwind fractional step difference for three-dimensional semiconductor device transient behavior problems โฎ A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET
Recommendations
- Title not available (Why is that?) ๐ ๐
- Title not available (Why is that?) ๐ ๐
- Title not available (Why is that?) ๐ ๐
- Title not available (Why is that?) ๐ ๐
- Finite volume element approximation and analysis for a kind of semiconductor device simulation ๐ ๐
- Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device ๐ ๐
- Implicit-explicit multistep finite element methods for the semiconductor device problem. ๐ ๐
- Numerical method of mixed finite volume-modified upwind fractional step difference for three-dimensional semiconductor device transient behavior problems ๐ ๐
- Finite difference fractional step methods for the transient behavior of a semiconductor device ๐ ๐
- Mixed finite volume methods for semiconductor device simulation ๐ ๐
This page was built for publication:
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q5436075)