NUMERICAL SIMULATION OF THE CONDUCTIVITY RELAXATION IN THE HIGH RESISTIVITY SEMICONDUCTOR

DOI10.3846/1392-6292.2007.12.379-388zbMath1132.78312OpenAlexW2064209417MaRDI QIDQ5442278

Natalija Tumanova, Albertas Pincevičius, Mečislavas Meilūnas

Publication date: 22 February 2008

Published in: Mathematical Modelling and Analysis (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.3846/1392-6292.2007.12.379-388

zbMATH Keywords

simulationparameters identificationparameters of the trapping statesrelaxation photoconductivity

Mathematics Subject Classification ID

Multistep, Runge-Kutta and extrapolation methods for ordinary differential equations (65L06) Technical applications of optics and electromagnetic theory (78A55) Lasers, masers, optical bistability, nonlinear optics (78A60) Motion of charged particles (78A35)

Related Items (1)

Numerical analysis of nonlinear model of excited carrier decay

This page was built for publication: NUMERICAL SIMULATION OF THE CONDUCTIVITY RELAXATION IN THE HIGH RESISTIVITY SEMICONDUCTOR