Barrier effects on the optoelectronic properties of GaN-based irregular multiple quantum wells for dichromatic white LEDs

DOI10.1007/s11431-010-4194-yzbMath1221.82132OpenAlexW2010872875MaRDI QIDQ546523

HuiMin Lu, GenXiang Chen

Publication date: 24 June 2011

Published in: Science China. Technological Sciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11431-010-4194-y

zbMATH Keywords

GaN-based materialsirregular multiple quantum wellswhite light-emitting diodes

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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