Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model

DOI10.1137/040610805zbMath1099.82022OpenAlexW2058041602MaRDI QIDQ5470278

A. El Ayyadi

Publication date: 30 May 2006

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/040610805

zbMATH Keywords

hysteresisfinite differencesSchrödinger-Poisson systemquantum drift-diffusion modelresonant tunneling diodequantum microscopic-macroscopic coupling

Mathematics Subject Classification ID

Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37) Quantum hydrodynamics and relativistic hydrodynamics (76Y05) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)

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