Deterministic Simulation of the Boltzmann--Poisson System in GaAs-Based Semiconductors

DOI10.1137/040607526zbMath1136.82379OpenAlexW2032611122MaRDI QIDQ5470400

Maria José Cáceres, José Antonio Carrillo, Armando Majorana

Publication date: 30 May 2006

Published in: SIAM Journal on Scientific Computing (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/040607526

zbMATH Keywords

WENO methodssemiconductor simulationdeterministic schemeGaAs deviceGunn oscillations

Mathematics Subject Classification ID

Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70) Applications to the sciences (65Z05)

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