EFFECTS OF GRAIN BOUNDARY WIDTH ON TRANSFER CHARACTERISTICS OF A POLYSILICON THIN-FILM TRANSISTOR

DOI10.1142/S0217984906010986zbMath1097.82566OpenAlexW1975865827MaRDI QIDQ5485732

Navneet Kumar Gupta, B. P. Tyagi

Publication date: 4 September 2006

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984906010986

zbMATH Keywords

grain boundaryeffective carrier mobilitypolysilicon thin-film transistor

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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