Stationary energy models for semiconductor devices with incompletely ionized impurities

DOI10.1002/zamm.200510230zbMath1138.82367OpenAlexW2138633923MaRDI QIDQ5704828

R. Hünlich, Annegret Glitzky

Publication date: 15 November 2005

Published in: ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/zamm.200510230

zbMATH Keywords

regularityexistenceuniquenessmixed boundary conditionsimplicit function theoremenergy modelsmasschargestrongly coupled elliptic systemsand energy transport in hetero structures

Mathematics Subject Classification ID

PDEs with low regular coefficients and/or low regular data (35R05) Statistical mechanics of semiconductors (82D37)

Related Items (4)

Numerical solution of two‐dimensional nonlinear Riesz space‐fractional reaction–advection–diffusion equation using fast compact implicit integration factor method ⋮ Stationary solutions to an energy model for semiconductor devices where the equations are defined on different domains ⋮ Analysis of a hybrid model for the electro-thermal behavior of semiconductor heterostructures ⋮ Analysis of electronic models for solar cells including energy resolved defect densities

Cites Work

• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
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