A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices
DOI10.1108/03321640510615634zbMath1079.82015OpenAlexW2112508032MaRDI QIDQ5707802
A. Domaingo, M. Galler, Ferdinand Schürrer
Publication date: 24 November 2005
Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/03321640510615634
Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Transport processes in time-dependent statistical mechanics (82C70)
Uses Software
Cites Work
- Efficient implementation of essentially nonoscillatory shock-capturing schemes
- Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
- Efficient implementation of weighted ENO schemes
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
- A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
- A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
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