A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices

DOI10.1108/03321640510615634zbMath1079.82015OpenAlexW2112508032MaRDI QIDQ5707802

A. Domaingo, M. Galler, Ferdinand Schürrer

Publication date: 24 November 2005

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321640510615634

zbMATH Keywords

Semiconductor devicesSimulationSilicon

Mathematics Subject Classification ID

Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Transport processes in time-dependent statistical mechanics (82C70)

Uses Software

• WENO

Cites Work

• Efficient implementation of essentially nonoscillatory shock-capturing schemes
• Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• Efficient implementation of weighted ENO schemes
• Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
• A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
• A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors

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