The Parameters of Partially Degenerate Semiconductors
From MaRDI portal
Publication:5812086
DOI10.1088/0370-1298/65/6/116zbMath0046.45105OpenAlexW2048217062MaRDI QIDQ5812086
Publication date: 1952
Published in: Proceedings of the Physical Society. Section A (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1088/0370-1298/65/6/116
Related Items (4)
Mathematical analysis of a thermodynamically consistent reduced model for iron corrosion ⋮ Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics ⋮ Negative differential conductance and effective electron mass in highly asymmetric ballistic bilayer graphene nanoribbon ⋮ Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations
This page was built for publication: The Parameters of Partially Degenerate Semiconductors