scientific article; zbMATH DE number 7538847
From MaRDI portal
Publication:5865529
zbMath1490.65165MaRDI QIDQ5865529
P. Colin, Claire Chainais-Hillairet, Ingrid Lacroix-Violet
Publication date: 9 June 2022
Title: zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Statistical mechanics of semiconductors (82D37) Finite volume methods for initial value and initial-boundary value problems involving PDEs (65M08)
Related Items (2)
Study of a pseudo-stationary state for a corrosion model: existence and numerical approximation ⋮ Mathematical analysis of a thermodynamically consistent reduced model for iron corrosion
Cites Work
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Numerical methods for the simulation of a corrosion model with moving oxide layer
- A finite volume scheme for convection-diffusion equations with nonlinear diffusion derived from the Scharfetter-Gummel scheme
- Finite volume approximation for an immiscible two-phase flow in porous media with discontinuous capillary pressure
- Mathematical and numerical study of a corrosion model
- Quasi-hydrodynamic semiconductor equations
- Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case
- Global solutions of the time-dependent drift-diffusion semiconductor equations
- On the semiconductor drift diffusion equations
- Compactness of discrete approximate solutions to parabolic PDEs -- application to a turbulence model
- A hierachy of hydrodynamic models for plasmas. Zero-electron-mass limits in the drift-diffusion equations
- Asymptotic Behavior of the Scharfetter–Gummel Scheme for the Drift-Diffusion Model
- Study of a Finite Volume Scheme for the Drift-Diffusion System. Asymptotic Behavior in the Quasi-Neutral Limit
- On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
- Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
- ON THE UNIQUENESS OF SOLUTIONS TO THE DRIFT-DIFFUSION MODEL OF SEMICONDUCTOR DEVICES
- Mixed finite volume methods for semiconductor device simulation
- On the Discretization of van Roosbroeck's Equations with Magnetic Field
- Finite volume scheme for multi-dimensional drift-diffusion equations and convergence analysis
- ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- Convergence of a finite-volume scheme for the drift-diffusion equations in 1D
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- Finite Volume Methods for Convection-Diffusion Problems
- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
- The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors
This page was built for publication: