Hydrodynamical modeling of charge carrier transport in semiconductors
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Publication:5929815
DOI10.1023/A:1010371810576zbMath1082.82010OpenAlexW1580420407MaRDI QIDQ5929815
Angelo Marcello Anile, Vittorio Romano
Publication date: 2000
Published in: Meccanica (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1023/a:1010371810576
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Related Items (13)
Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors ⋮ Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors ⋮ Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors ⋮ A realizability-preserving discontinuous Galerkin method for the \(M_1\) model of radiative transfer ⋮ Strong discontinuities for the 2-D MEP hydrodynamical model of charge transport in semiconductors ⋮ Local-in-time well-posedness of a regularized mathematical model for silicon MESFET ⋮ Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle ⋮ Nonlinear stability of smooth solutions of the energy-transport model for semiconductors ⋮ High field fluid dynamical models for the transport of charge carriers in semiconductors ⋮ Global existence for the system of the macroscopic balance equations of charge transport in semiconductors ⋮ Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle ⋮ Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors ⋮ Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients
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