A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC

DOI10.1016/S0378-4754(00)00262-7zbMath1114.82315OpenAlexW1998144967MaRDI QIDQ5938378

E. Bellotti, Kevin F. Brennan, Mats Hjelm, Hans-Erik Nilsson

Publication date: 18 July 2001

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/s0378-4754(00)00262-7

zbMATH Keywords

Monte Carlo simulation4H-SiCCharge transportImpact ionization

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70) Kinetic theory of gases in time-dependent statistical mechanics (82C40)

Cites Work

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