Computational macroscopic approximations to the one-dimensional relaxation-time kinetic system for semiconductors

DOI10.1016/S0167-2789(00)00139-1zbMath0976.82053OpenAlexW2018311843MaRDI QIDQ5940295

José Antonio Carrillo, Chi-Wang Shu, Irene Martínez Gamba

Publication date: 29 July 2001

Published in: Physica D (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/s0167-2789(00)00139-1

zbMATH Keywords

kinetic theorydeterministic computational methodshigh field scaling limitsone-dimensional relaxation charged transportrelaxation-time kernelsubmicron channel devicesWENO numerical method for conservation laws

Mathematics Subject Classification ID

Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Statistical mechanics of semiconductors (82D37) Kinetic theory of gases in time-dependent statistical mechanics (82C40) Partial differential equations of mathematical physics and other areas of application (35Q99)

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Cites Work

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• Efficient implementation of weighted ENO schemes
• Device benchmark comparisons via kinetic, hydrodynamic, and high-field models
• A Drift-Collision Balance for a Boltzmann--Poisson System in Bounded Domains
• A domain decomposition method for silicon devices
• Extended Hydrodynamical Model of Carrier Transport in Semiconductors
• The Child–Langmuir Law for the Boltzmann Equation of Semiconductors

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