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A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices - MaRDI portal

A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

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Publication:5956354

DOI10.1016/S0010-4655(01)00347-2zbMath0985.82006WikidataQ127861676 ScholiaQ127861676MaRDI QIDQ5956354

S. M. Sze, Jinn-Liang Liu, Yiming Li, Tien-Sheng Chao

Publication date: 27 May 2002

Published in: Computer Physics Communications (Search for Journal in Brave)




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