Toughening due to domain switching in single crystal ferroelectric materials

DOI10.1007/s10704-007-9056-7zbMath1197.74130OpenAlexW1971883465MaRDI QIDQ602087

Chad M. Landis, Jianshun Sheng

Publication date: 29 October 2010

Published in: International Journal of Fracture (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s10704-007-9056-7

zbMATH Keywords

finite element methodsferroelectricsdomain switchingsingle crystalfracture toughening

Mathematics Subject Classification ID

Brittle fracture (74R10) Crystalline structure (74E15) Finite element methods applied to problems in solid mechanics (74S05) Electromagnetic effects in solid mechanics (74F15)

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Cites Work

• On the fracture toughness anisotropy of mechanically poled ferroelectric ceramics
• On the fracture toughness of ferroelastic materials.
• Influence of domain switching zones on the fracture toughness of ferroelectrics
• Switch-toughening of ferroelectrics subjected to electric fields
• A constitutive model for ferroelectric polycrystals
• Energetically consistent boundary conditions for electromechanical fracture