Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode

DOI10.1002/andp.202100121OpenAlexW3199931840MaRDI QIDQ6070188

Unnamed Author, Unnamed Author, Unnamed Author

Publication date: 20 November 2023

Published in: Annalen der Physik (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/andp.202100121

zbMATH Keywords

resonant tunneling diodenegative differential resistancenon-equilibrium Green's functionFermi velocityesaki diode

Mathematics Subject Classification ID

Quantum theory (81-XX)

Related Items (1)

Flat-band states induced negative differential resistance in organic-ferromagnetic devices

Cites Work

• Quantum Transport: Atom to Transistor

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