Investigation into MIS structures based on graded-band-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods

DOI10.1007/S11182-010-9332-2zbMath1201.82059OpenAlexW2021092602MaRDI QIDQ610237

S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov

Publication date: 3 December 2010

Published in: Russian Physics Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11182-010-9332-2

zbMATH Keywords

admittancegraded-band-gap layersmercury cadmium telluridemetal-dielectric-semiconductor structurephoto-emf

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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