Modelling of the influence of interelectronic interaction on the stationary characteristics of a resonant tunnel diode with spacer layers

DOI10.1007/S11182-010-9357-6zbMATH Open1201.82056OpenAlexW2041155430MaRDI QIDQ610269

V. F. Elesin, I. Yu. Kateev, M. A. Remnev

Publication date: 3 December 2010

Published in: Russian Physics Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11182-010-9357-6

zbMATH Keywords

resonant tunnelingresonant tunnel diodespacers

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Modelling of the influence of interelectronic interaction on the stationary characteristics of a resonant tunnel diode with spacer layers

Related Items (1)

Modelling of the influence of interelectronic interaction on the stationary characteristics of a resonant tunnel diode with spacer layers

This page was built for publication: Modelling of the influence of interelectronic interaction on the stationary characteristics of a resonant tunnel diode with spacer layers

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q610269)