Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions

DOI10.1016/j.jde.2010.08.029zbMath1213.35055OpenAlexW2060485292MaRDI QIDQ615977

Sumit K. Garg

Publication date: 7 January 2011

Published in: Journal of Differential Equations (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jde.2010.08.029

zbMATH Keywords

energy estimatesboundary layerone space dimensionsmall Debye lengthmatched asymptotic analysisill-prepared boundary dataphysical contact-insulating boundary conditionswell prepared boundary

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37)

Related Items (2)

Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities ⋮ Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile

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