Electromechanical analysis of a piezoelectric semiconductor bilayer system with imperfect interface

DOI10.1016/j.euromechsol.2023.105173MaRDI QIDQ6181390

No author found.

Publication date: 2 January 2024

Published in: European Journal of Mechanics. A. Solids (Search for Journal in Brave)

zbMATH Keywords

imperfect interfaceelectromechanical couplingflexoelectric effectpiezoelectric semiconductorbilayer system

Mathematics Subject Classification ID

Mechanics of deformable solids (74-XX)

Cites Work

• Thermal stresses in bilayer systems with weak interface
• Static analysis of composite beams with weak shear connection
• SH waves in multilayered piezoelectric semiconductor plates with imperfect interfaces
• A mode III crack in a piezoelectric semiconductor of crystals with 6 mm symmetry
• Comparative study of the flexoelectricity effect with a highly/weakly interface in distinct piezoelectric materials (PZT-2, PZT-4, PZT-5H, LiNbO₃, BaTiO₃)

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