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3D Finite Element Modeling of Current Densities in Semiconductor Transport with Impact Ionization - MaRDI portal

3D Finite Element Modeling of Current Densities in Semiconductor Transport with Impact Ionization

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Publication:6257187

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arXiv1412.3691MaRDI QIDQ6257187

Riccardo Sacco, Andrea Bortolossi, Giovanni Novielli, Aurelio G. Mauri

Publication date: 11 December 2014

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Elliptic equations and elliptic systems (35Jxx)

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