Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode

DOI10.1016/J.JMAA.2010.12.023zbMath1228.35084OpenAlexW2092924748MaRDI QIDQ633689

Elisa Röhrig, Ansgar Jüngel, René Pinnau

Publication date: 29 March 2011

Published in: Journal of Mathematical Analysis and Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jmaa.2010.12.023

zbMATH Keywords

asymptotic analysiselectron temperaturelattice temperatureMOS diode

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Weak solutions to PDEs (35D30) Quasilinear elliptic equations (35J62) Nonlinear boundary value problems for nonlinear elliptic equations (35J66)

Related Items (1)

A solution to the simplified multi-dimensional energy-transport model with a general conductivity for semiconductors

Cites Work

• A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
• An Asymptotic Analysis of One-Dimensional Models of Semiconductor Devices
• On a hierarchy of macroscopic models for semiconductors
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