Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects

DOI10.1016/J.PHYSLETA.2007.10.058zbMath1220.82154OpenAlexW1978013604MaRDI QIDQ637156

E. L. Pankratov

Publication date: 2 September 2011

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physleta.2007.10.058

Mathematics Subject Classification ID

Functional equations in the complex plane, iteration and composition of analytic functions of one complex variable (30D05) Statistical mechanics of semiconductors (82D37)

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