Local-in-time well-posedness of a regularized mathematical model for silicon MESFET

DOI10.1007/S00033-010-0063-6zbMath1237.82044OpenAlexW2084774567MaRDI QIDQ638709

D. L. Tkachev, Alexander Blokhin

Publication date: 13 September 2011

Published in: ZAMP. Zeitschrift für angewandte Mathematik und Physik (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s00033-010-0063-6

zbMATH Keywords

fixed-point argumenthydrodynamical model of charge transport in semiconductorsnon-Cauchy-Kovalevskaja-type system

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Existence problems for PDEs: global existence, local existence, non-existence (35A01) Weak solutions to PDEs (35D30) Initial-boundary value problems for systems of nonlinear higher-order PDEs (35G61)

Related Items (2)

Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle ⋮ Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients

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