Modeling the performance and bandwidth of adiabatic quantum memories

DOI10.1063/5.0188597arXiv2306.07855MaRDI QIDQ6440178

Takla Nateeboon, Chanaprom Cholsuk, Sujin Suwanna, Tobias Vogl

Publication date: 13 June 2023

Abstract: Quantum memories are essential for quantum repeaters that will form the backbone of the future quantum internet. Such memory can capture a signal state for a controllable amount of time after which this state can be retrieved. In this work, we theoretically investigated how atomic material and engineering parameters affect the performance and bandwidth of a quantum memory. We have developed a theoretical model for quantum memory operation based on the Lindblad master equation and adiabatic quantum state manipulation. The material properties and their uncertainty are evaluated to determine the performance of Raman-type quantum memories based on defects in two-dimensional hexagonal boron nitride (hBN). We derived a scheme to calculate the signal bandwidth based on the material parameters as well as the maximum efficiency that can be realized. The bandwidth depends on four factors: the signal photon frequency, the dipole transition moments in the electronic structure, cavity volume, and the strength of the external control electric field. As our scheme is general, it can be applied to many other quantum materials with a suitable level structure. We therefore provided a promising route for designing and selecting materials for quantum memories. Our work is therefore an important step toward the realization of a large-scale quantum network.

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