Properties of the steady state distribution of electrons in semiconductors

DOI10.3934/KRM.2011.4.809zbMath1252.82114OpenAlexW2596947033MaRDI QIDQ656474

Wolfgang Wagner, Orazio Muscato, Vincenza Di Stefano

Publication date: 18 January 2012

Published in: Kinetic and Related Models (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.3934/krm.2011.4.809

zbMATH Keywords

Monte Carlo algorithmsemiconductorselectron transportsteady state distributionBoltzmann-Poisson equation

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70) Boltzmann equations (35Q20)

Related Items (7)

Electron transport in silicon nanowires having different cross-sections ⋮ Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires ⋮ Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model ⋮ A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ Heat generation in silicon nanometric semiconductor devices ⋮ Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire

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