Efficient deterministic parallel simulation of 2D semiconductor devices based on WENO-Boltzmann schemes

DOI10.1016/j.cma.2008.10.003zbMath1229.78027OpenAlexW2126386662MaRDI QIDQ658164

José M. Mantas, Maria José Cáceres

Publication date: 11 January 2012

Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.cma.2008.10.003

zbMATH Keywords

parallel numerical algorithmsfinite difference weighted essentially non-oscillatory schemeshigh performance cluster computingsemiconductor simulation

Mathematics Subject Classification ID

Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Statistical mechanics of semiconductors (82D37)

Related Items

A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs ⋮ A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo

Uses Software

• LAPACK
• WENO

Cites Work

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• Multidomain WENO finite difference method with interpolation at subdomain interfaces
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• Resolution of high order WENO schemes for complicated flow structures.
• Efficient implementation of weighted ENO schemes
• A distributed memory parallel element-by-element scheme for semiconductor device simulation
• 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
• LAPACK Users' Guide
• Total variation diminishing Runge-Kutta schemes